Novel characteristics of persistent spectral hole-burning and hole-filling in Photosystem II core complexes
نویسندگان
چکیده
منابع مشابه
Persistent spectral hole burning by simultaneous two-photon absorption
We show for the ®rst time persistent spectral hole burning by simultaneous absorption of two 1138 nm photons in an inhomogeneously broadened S1 S0 Qy transition of unstable photo-tautomer of chlorin in polymer ®lm at low temperature. Spectrally selective hole burning is achieved due to high (10%) quantum eciency of photo-transformation in that system and high peak intensity (tens of GW/cm) o...
متن کاملSlow light with persistent hole burning
R. N. Shakhmuratov, A. Rebane, P. Mégret, and J. Odeurs Instituut voor Kernen Stralingsfysica, Katholieke Universiteit Leuven, Celestijnenlaan 200 D, B-3001 Leuven, Belgium Optique Nonlinéaire Théorique, Université Libre de Bruxelles, Campus Plaine CP 231, B-1050 Bruxelles, Belgium Kazan Physical Technical Institute, Russian Academy of Sciences, 10/7 Sibirsky trakt, Kazan 420029 Russia Physics ...
متن کاملSpectral hole burning and selection of conformational substates in chromoproteins.
We investigated spectral holes burnt at 1.5 K into the origins of several tautomeric forms of mesoporphyrin IX-substituted horseradish peroxidase at pH 8 under pressures up to 2 MPa. From the pressure-induced lineshift the compressibility of the apoprotein could be determined. We found that the compressibility changed significantly when measured at different tautomer origins. It was concluded t...
متن کاملSpectral hole burning and its application in microwave photonics
Spectral hole burning, used in inhomogeneously broadened emitters, is a well-established optical1 technique, with applications from spectroscopy to slow light2 and frequency combs3. In microwave photonics4, electron spin ensembles5,6 are candidates for use as quantum memories7 with potentially long storage times8. Here, we demonstrate long-lived collective dark states9 by spectral hole burning ...
متن کاملAnalytical description of spectral hole-burning effects in active semiconductors.
An analytical description of the effects of spectral hole burning on the optical properties of active semiconductor materials is developed for fields that are slow compared to intraband relaxation times. Nonlinear gain compression and four-wave mixing effects are discussed.
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Luminescence
سال: 2007
ISSN: 0022-2313
DOI: 10.1016/j.jlumin.2007.02.030